Si2377EDS - Vishay

Si2377EDS P-Channel 20V (D-S) MOSFET

New Product P-Channel 20 V (D-S) MOSFET Si2377EDS Vishay Siliconix PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) 0.061 at VGS = - 4.5 V 0.080 at VGS = - 2.5 V 0.110 at VGS = - 1.8 V 0.165 at VGS = - 1.5 V ID (A)a - 4.4 - 3.8 - 3.3 - 0.5 Qg (Typ.) 7.6 nC TO-236 (SOT-23) FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFE.

Features

• Halogen-free According to IEC 61249-2-21 Definition
• TrenchFET® Power MOSFET
• 100 % Rg Tested
• Typical ESD Performance 2000 V
• Built in ESD Protection with Zener Diode
• Compliant to RoHS Directive 2002/95/EC APPLICATIONS
• Load Switch for Portable Devices S G1 S2 3D Top View Si2377EDS (P6)
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* Marking Code Ordering Information: Si2377EDS-T1-GE3 (Lead (Pb)-free and Halogen-free) G R D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current Cont.