Si2306BDS - Vishay

Si2306BDS N-Channel 30-V (D-S) MOSFET

- 0755-83307717 www.ping-web.com [email protected] Si2306BDS Vishay Siliconix N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) 0.047 at VGS = 10 V 0.065 at VGS = 4.5 V ID (A) 4.0 3.5 Qg (Typ.) 3.0 FEATURES • Halogen-free Option Available • TrenchFET® Power MOSFET • 100 % Rg Tested RoHS COMPLIANT TO-236 (SOT-23) G 1 3 D S 2 .

Features

• Halogen-free Option Available
• TrenchFET® Power MOSFET
• 100 % Rg Tested RoHS COMPLIANT TO-236 (SOT-23) G 1 3 D S 2 Top View Si2306BDS (L6 )
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* Marking Code Ordering Information: Si2306BDS-T1-E3 (Lead (Pb)-free) Si2306BDS-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)a, b Pulsed Drain Current Continuous Source Current (Diode Conduction)a, b Maximum Power Dissipationa, b Operating Junction and Storage Temperature Range TA = 25 °C TA = 70 °C T.