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SI2305 20V P-Channel Enhancement Mode MOSFET VDS= -20V RDS(ON), [email protected], [email protected] RDS(ON), [email protected], [email protected] 130mΩ 190mΩ Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions D G S SOT-23(PACKAGE) REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0..
Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions D G S SOT-23(PACKAGE) REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.15 0° 10° Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current 1) Symbol Limit Unit VDS VGS ID IDM 2) -20 ±8 -2.2 -8 1.25 0.8 -55 to 150 100 166 o V A TA = 2.
Si2305 - SiPU
Si2305 P-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for low RDS(ON) Rugged.
Si2305 - ETC
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | SI2300 |
Kexin |
N-Channel MOSFET |
|
| 2 | SI2300 |
HAOCHANG |
N-Channel MOSFET |
|
| 3 | SI2300 |
CCSemi |
N-Channel MOSFET |
|
| 4 | SI2300 |
HOTTECH |
Plastic-Encapsulate Mosfets |
|
| 5 | SI2300 |
MCC |
N-Channel MOSFET |
|
| 6 | Si2300 |
SiPU |
N-Channel MOSFET |
|
| 7 | SI2300 |
JinYu |
20V N-Channel MOSFET |
|
| 8 | SI2300DS |
Vishay Siliconix |
N-Channel MOSFET |
|
| 9 | SI2301 |
JinYu |
P-Channel MOSFET |
|
| 10 | SI2301 |
YANGJING |
P-Channel MOSFET |
|
| 11 | SI2301 |
MCC |
P-Channel Enhancement Mode Field Effect Transistor |
|
| 12 | SI2301 |
BLUE ROCKET ELECTRONICS |
P-CHANNEL MOSFET |
|
