SZA3044Z - RF Micro Devices

SZA3044Z 1W POWER AMPLIFIER

RFMD’s SZA-3044 is a high linearity class AB Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. This HBT amplifier is made with InGaP on GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability. This product is spe- cifically designed as a final or d.

Features

an output power detector, Optimum Technology Matching® Applied on/off power control and high RF overdrive robustness. This product is available in a RoHS Compliant and Green package GaAs HBT with matte tin finish, designated by the “Z” package suffix. GaAs MESFET  InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT RF MEMS Features
 P1dB=31dBm at 5V
 802.11a 54Mb/s 2.5% EVM Per- formance
 POUT=24dBm, VCC=5V, 340mA, PAE 14.5%
 POUT=25dBm, VCC=6V, 365mA, PAE 14.5%
 On-Chip Output Power Detector
 Robust - Survives RF Input Power = +15 dBm
 On Chip E.