RFMD’s SZA-2044 is a high efficiency class AB heterojunction bipolar transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. This HBT amplifier is made with InGaP on GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability. This product is spe- cifically designed as a final sta.
an output power detector, on/off power control, and high RF overdrive robustness. This product is available in a ROHS Compliant and Green package with matte tin finish, designated by the “Z” package suffix.
GaAs MESFET
Functional Block Diagram
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MEMS
Features
Z Part Number is Available in RoHS Compliant, Pb-Free, and RFMD Green
802.11g 54Mb/s Class AB Performance
POUT = 22dBm at 3% EVM, 5V, 340mA
POUT = 18dBm at 3% EVM, 3.3V, 175mA
On-Chip Output Power Detector
P1dB = 29.5dBm at 5V, P1dB =
25.
Sirenza Microdevices’ SZA-2044 is a high efficiency class AB Heterojunction Bipolar Transistor (HBT) amplifier housed in.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SZA-2044Z |
Sirenza Microdevices |
1W Power Amplifier | |
2 | SZA-3044 |
Sirenea |
Power Amplifier | |
3 | SZA-3044Z |
Sirenza Microdevices |
1W Power Amplifier | |
4 | SZA-5044 |
Sirenea |
Power Amplifier | |
5 | SZA-5044 |
RF Micro Devices |
5V POWER AMPLIFIER | |
6 | SZA-5044Z |
Sirenza Microdevices |
Power Amplifier | |
7 | SZA-5044Z |
RF Micro Devices |
5V POWER AMPLIFIER | |
8 | SZA-6044 |
RF Micro Devices |
POWER AMPLIFIER | |
9 | SZA1000 |
NXP |
QIC digital equalizer | |
10 | SZA100A |
MSV |
Zener voltage regulator diodes | |
11 | SZA1010 |
NXP |
Digital Servo Driver 3 DSD-3 | |
12 | SZA10A |
MSV |
Zener voltage regulator diodes |