SVGQ046R8NLPD - Silan Microelectronics

SVGQ046R8NLPD 40V DUAL N-CHANNEL MOSFET

SVGQ046R8NLPD is dual N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance and high avalanche breakdown tolerance. This device is widely used in power managemen.

Features

 AEC-Q101 qualified  63A, 40V, RDS(on)(typ.)=5.6m@VGS=10V  Low gate charge  Low Crss  Fast switching  Extreme dv/dt rated  100% avalanche tested  Pb-free lead plating  RoHS compliant  Max. junction temperature: Tjmax.=175 ºC KEY PERFORMANCE PARAMETERS Characteristics VDS VGS(th) RDS(on),max ID Qg.typ Ratings 40 2.4~3.4 6.8 63 18 Unit V V m A nC 123 4 MO-4A-235-1.27 ORDERING INFORMATION Part No. SVGQ046R8NLPDTR Package MO-4A-235-1.27 Marking Q046R8NLP Hazardous Substance Control Halogen free Packing Type Tape & Reel HANGZHOU SILAN MICROELECTRONICS CO.,LTD http: //www.sil.