SVG062R8NL5 - Silan Microelectronics

SVG062R8NL5 60V N-CHANNEL MOSFET

SVG062R8NL5 is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance and high avalanche breakdown tolerance. This device is widely used in power management fo.

Features

 140A, 60V, RDS(on)(typ.)=2.4m@VGS=10V  Low gate charge  Low Crss  Fast switching  Extreme dv/dt rated  100% avalanche tested  Pb-free lead plating  RoHS compliant S1 S2 S3 G4 8D 7D 6D 5D 8 7 6 5 65 87 4 23 1 1 32 4 PDFN-8-5X6X0.95-1.27 KEY PERFORMANCE PARAMETERS Characteristics VDS VGS(th) RDS(on),max ID Qg.typ Ratings 60 2.5~3.5 2.8 140 48 Unit V V m A nC ORDERING INFORMATION Part No. SVG062R8NL5TR Package PDFN-8-5X6X0.95-1.27 Marking 062R8NL5 Hazardous Substance Control Halogen free Packing Type Tape & Reel HANGZHOU SILAN MICROELECTRONICS CO.,LTD http: //www.sila.