SVF6N70N - Silan Microelectronics

SVF6N70N 700V N-CHANNEL MOSFET

SVF6N70MJG/D/K/N is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and c.

Features

 6A,700V,RDS(on(typ.)=1.35@VGS=10V  Low gate charge  Low Crss  Fast switching  Improved dv/dt capability 2 1 3 1.Gate 2.Drain 3.Source 12 3 TO-262-3L 123 TO-251N-3L 12 3 TO-251J-3L 1 3 TO-252-2L ORDERING INFORMATION Part No. SVF6N70MJG SVF6N70DTR SVF6N70K SVF6N70MN Package TO-251J-3L TO-252-2L TO-262-3L TO-251N-3L Marking SVF6N70MJG SVF6N70D SVF6N70K 6N70MN Hazardous Substance Control Halogen free Halogen free Pb free Halogen free Packing Type Tube Tape & Reel Tube Tube HANGZHOU SILAN MICROELECTRONICS CO.,LTD http: //www.silan.com.cn Rev.:2.9 Page 1 of 11 Silan Microelectro.