SVF10N60CT - Silan Microelectronics

SVF10N60CT 600V N-CHANNEL MOSFET

SVF10N60CF/T is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved cell and guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and com.

Features

 10A,600V,RDS(on)(typ.)=0.75@VGS=10V  Low gate charge  Low Crss  Fast switching  Improved dv/dt capability NOMENCLATURE 2 11 23 3 1.Gate 2.Drain 3.Source TO-220FJD-3L 1 23 TO-220F-3L 1 23 TO-220-3L SVFXNEXXCX Silan VDMOS Code of F-Cell process Nominal current,using 1 or 2 digits: Example:4 denotes 4A, 10 denotes 10A, 08 denotes 0.8A N denotes N Channel Package information.Example: F:TO-220F; T:TO-220 REV. Nominal Voltage,using 2 digits Example: 60 denotes 600V, 65 denotes 650V. Special Features indication, May be omitted. Example: E denotes embeded ESD structure ORDERING INFORMATI.