SVF14N25CD is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche a.
2 1 3 1.Gate 2.Drain 3.Source 13 TO-252-2L 14A, 250V, RDS(on)(typ.)=0.28@VGS=10V Ultra low gate charge Low Crss Fast switching Improved dv/dt capability ORDERING INFORMATION Part No. SVF14N25CDTR Package TO-252-2L Marking 14N25CD Hazardous substance control Halogen free Packing Type Tape&Reel ABSOLUTE MAXIMUM RATINGS (TA=25C UNLESS OTHERWISE NOTED) Characteristics Drain-Source Voltage Gate-Source Voltage Drain Current TC=25°C TC=100°C Drain Current Pulsed Power Dissipation (TC=25C) -Derate above 25C Single Pulsed Avalanche Energy (Note 1) Diode dv/dt (Note 2) .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SVF14N60T |
Silan Microelectronics |
600V N-CHANNEL MOSFET | |
2 | SVF10N60CF |
Silan Microelectronics |
600V N-CHANNEL MOSFET | |
3 | SVF10N60CFJ |
Silan Microelectronics |
600V N-CHANNEL MOSFET | |
4 | SVF10N60CFJD |
Silan Microelectronics |
600V N-CHANNEL MOSFET | |
5 | SVF10N60CT |
Silan Microelectronics |
600V N-CHANNEL MOSFET | |
6 | SVF10N60F |
Silan Microelectronics |
600V N-CHANNEL MOSFET | |
7 | SVF10N60FG |
Silan Microelectronics |
600V N-CHANNEL MOSFET | |
8 | SVF10N60K |
Silan Microelectronics |
600V N-CHANNEL MOSFET | |
9 | SVF10N60S |
Silan Microelectronics |
600V N-CHANNEL MOSFET | |
10 | SVF10N60STR |
Silan Microelectronics |
600V N-CHANNEL MOSFET | |
11 | SVF10N60T |
Silan Microelectronics |
600V N-CHANNEL MOSFET | |
12 | SVF10N65F |
Silan Microelectronics |
650V N-CHANNEL MOSFET |