SVF12N65CFJ - Silan Microelectronics

SVF12N65CFJ 650V N-CHANNEL MOSFET

0B SVF12N65CFJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanc.

Features

1B  12A,650V,RDS(on)(typ.)=0.64Ω@VGS=10V  Low gate charge  Low Crss  Fast switching  Improved dv/dt capability NOMENCLATURE ORDERING INFORMATION Part No. SVF12N65CFJ Package TO-220FJ-3L Marking 12N65CFJ Hazardous Substance Control Halogen free Packing Tube HANGZHOU SILAN MICROELECTRONICS CO.,LTD http: //www.silan.com.cn Rev.:1.3 Page 1 of 7 Silan Microelectronics SVF12N65CFJ_Datasheet ABSOLUTE MAXIMUM .