SVF12N60CF - Silan Microelectronics

SVF12N60CF 600V N-CHANNEL MOSFET

SVF12N60CF is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commuta.

Features

 12A,600V,RDS(on)(typ.)=0.58@VGS=10V  Low gate charge  Low Crss  Fast switching  Improved dv/dt capability NOMENCLATURE ORDERING INFORMATION Part No. SVF12N60CF Package TO-220F-3L Marking SVF12N60CF Hazardous Substance Control Halogen free Packing Tube HANGZHOU SILAN MICROELECTRONICS CO.,LTD http: //www.silan.com.cn Rev.:1.3 Page 1 of 7 SVF12N60CF_Datasheet ABSOLUTE MAXIMUM RATINGS (TC=25C unless otherwise noted) Characteristics Drain-Source Voltage Gate-Source Voltage Drain Current Drain Current Pulsed TC=25°C TC=100°C Power Dissipation(TC=25C) -Derate above 25C Sing.