SVDZ24ND - Silan Microelectronics

SVDZ24ND 55V N-CHANNEL MOSFET

SVDZ24NT is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan new planar VDMOS process. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and com.

Features

 17A,55V,RDS(on)(typ.)=45m@VGS=10V  Low gate charge  Low Crss  Fast switching  Improved dv/dt capability 1 23 TO-220-3L 1 3 TO-252-2L ORDERING INFORMATION Part No. SVDZ24NT SVDZ24NDTR Package TO-220-3L TO-252-2L Marking SVDZ24NT SVDZ24ND Hazardous Substance Control Pb free Halogen free Packing Type Tube Tape & Reel ABSOLUTE MAXIMUM RATINGS (TC=25C UNLESS OTHERWISE NOTED) Characteristics Drain-Source Voltage Gate-Source Voltage Drain Current TC=25°C TC=100°C Drain Current Pulsed Power Dissipation(TC=25C) -Derate above 25C Single Pulsed Avalanche Energy (Note 1) Operat.