SVD9Z24NT - Silan Microelectronics

SVD9Z24NT P-CHANNEL MOSFET

SVD9Z24NT is a P-channel enhancement mode power MOS field effect transistor which is produced using Silan planar VDMOS process. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. This device is wid.

Features

 -12A, -55V ,RDS(on)(typ.)<175m@VGS=-10V  P channel  Low gate charge  Low Crss  Fast switching  Improved dv/dt capability 1 23 TO-220-3L ORDERING INFORMATION Part No. SVD9Z24NT Package TO-220-3L Marking SVD9Z24N Harzardous Substance Control Pb free Packing Type Tube ABSOLUTE MAXIMUM RATINGS (TC=25C unless otherwise noted) Characteristics Drain-Source Voltage Gate-Source Voltage Drain Current Drain Current Pulsed TC=25°C TC=100°C Power Dissipation(TC=25C) -Derate above 25C Single Pulsed Avalanche Energy (Note 1) Operation Junction Temperature Range Storage Temperature.