SVD8N60T - Silan Microelectronics

SVD8N60T 600V N-CHANNEL MOSFET

SVD8N60T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-RinTM structure DMOS technology. The improved planar stripe cell and the improved guarding ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy puls.

Features

∗ 8A,600V,RDS(on) typ =0.96Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability ORDERING SPECIFICATIONS Part No. SVD8N60T SVD8N60F Package TO-220-3L TO-220F-3L Marking SVD8N60T SVD8N60F Shipping 50Unit/Tube 50Unit/Tube ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Drain Current Pulsed Power Dissipation(TC=25°C) -Derate above 25°C Single Pulsed Avalanche Energy (Note 1) Repetitive Avalanche Energy Operation Junction Temperature Storage Temperature Symbol VDS VGS ID IDM PD EAS EAR TJ Tst.