SVD830DTR - Silan Microelectronics

SVD830DTR 500V N-CHANNEL MOSFET

SVD830T/F/D is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-RinTM structure DMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse .

Features

∗ 4.5A,500V,RDS(on(typ)=1.3Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability ORDERING SPECIFICATIONS Part No. SVD830T SVD830F SVD830D SVD830DTR Package TO-220-3L TO-220F-3L TO-252-2L TO-252-2L Marking SVD830T SVD830F SVD830D SVD830D Material Pb free Pb free Pb free Pb free Packing Tube Tube Tube Tape & Reel ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Drain Current Pulsed Power Dissipation(TC=25°C, TO-220) -Derate above 25°C Single Pulsed Avalanche Energy (Note 1) Operation J.