SUN07A65D - AUK

SUN07A65D New Generation N-Ch Power MOSFET

SUN07A65D New Generation N-Ch Power MOSFET HIGH SPEED SWITCHING APPLICATION Features  Low drain-source On resistance: RDS(on)=1.2Ω (Typ.)  Low gate charge: Qg=21nC (Typ.)  Low reverse transfer capacitance: Crss=5pF (Typ.)  Lower EMI noise  RoHS compliant device  100% avalanche tested Ordering Information Part Number Marking Package SUN07A65D SU.

Features

 Low drain-source On resistance: RDS(on)=1.2Ω (Typ.)
 Low gate charge: Qg=21nC (Typ.)
 Low reverse transfer capacitance: Crss=5pF (Typ.)
 Lower EMI noise
 RoHS compliant device
 100% avalanche tested Ordering Information Part Number Marking Package SUN07A65D SUN07A65 TO-252 D G S TO-252 Marking Information SUN 07A65 YWW Column 1, 2: Device Code Column 3: Production Information e.g.) YWW -. YWW: Date Code (year, week) Absolute maximum ratings (TC=25C unless otherwise noted) Characteristic Symbol Drain-source voltage Gate-source voltage Drain current (DC)
* Drain current .