SUN04A60F - AUK

SUN04A60F New Generation N-Ch Power MOSFET

SUN04A60F New Generation N-Ch Power MOSFET HIGH SPEED SWITCHING APPLICATION Features  Low drain-source On resistance: RDS(on)=2.1Ω (Typ.)  Low gate charge: Qg=12nC (Typ.)  Low reverse transfer capacitance: Crss=6.3pF (Typ.)  Lower EMI noise  RoHS compliant device  100% avalanche tested Ordering Information Part Number Marking Package GDS TO-220.

Features

 Low drain-source On resistance: RDS(on)=2.1Ω (Typ.)
 Low gate charge: Qg=12nC (Typ.)
 Low reverse transfer capacitance: Crss=6.3pF (Typ.)
 Lower EMI noise
 RoHS compliant device
 100% avalanche tested Ordering Information Part Number Marking Package GDS TO-220F-3L SUN04A60F SUN04A60 TO-220F-3L Marking Information AAUUKK ◎S△UYNΔM04YDADM6□D0D SDB20D45 Column 1: Manufacturer Column 2: Production Information e.g.) ◎△YMDD□ -. ◎: Option Code -. △: Factory Management Code -. YMDD: Date Code (Year, Month, Daily) -. □: Package Option Code Column 3: Device Code Absolute maximum ratin.