www.vishay.com SUM50020EL Vishay Siliconix N-Channel 60 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) MAX. 0.0021 at VGS = 10 V 60 0.0026 at VGS = 4.5 V ID (A) d 120 120 Qg (TYP.) 126 TO-263 Top View S D G Ordering Information: SUM50020EL-GE3 (lead (Pb)-free and halogen-free) FEATURES • TrenchFET® power MOSFET • Maximum 175 °C junction temp.
• TrenchFET® power MOSFET
• Maximum 175 °C junction temperature
• Qgd/Qgs ratio < 0.25
• Operable with logic-level gate drive
• 100 % Rg and UIS tested
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Power supply
- Secondary synchronous rectification
• DC/DC converter
• Power tools
• Motor drive switch
• DC/AC inverter
• Battery management
G
D S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current (TJ = 150 .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SUM50F |
SSDI |
(SUM20F - SUM50F) HIGH VOLTAGE RECTIFIER | |
2 | SUM50FSMS |
SSDI |
(SUM20FSMS - SUM50FSMS) HIGH VOLTAGE RECTIFIER | |
3 | SUM50N06-16L |
Vishay Siliconix |
N-Channel 60-V (D-S) 175C MOSFET / Logic Level | |
4 | SUM50UF |
SSDI |
(SUM20UF - SUM50UF) HIGH VOLTAGE ULTRA FAST RECTIFIER | |
5 | SUM50UFSMS |
SSDI |
(SUM20UFSMS - SUM50UFSMS) HIGH VOLTAGE ULTRA FAST RECTIFIER | |
6 | SUM09MN20-270 |
Vishay Siliconix |
N-Channel 200-V (D-S) 175C MOSFET | |
7 | SUM09N20-270 |
Vishay |
N-Channel MOSFET | |
8 | SUM10250E |
Vishay |
N-Channel MOSFET | |
9 | SUM110N02-03P |
Vishay Siliconix |
N-Channel 20-V (D-S) 175 C MOSFET | |
10 | SUM110N03-03 |
Vishay Siliconix |
N-Channel 30-V (D-S) 175C MOSFET | |
11 | SUM110N03-03P |
Vishay Siliconix |
N-Channel 30-V (D-S) 175C MOSFET | |
12 | SUM110N04-03 |
Vishay Siliconix |
N-Channel 40-V (D-S) 200C MOSFET |