SUM45N25-58 - Vishay Siliconix

SUM45N25-58 N-Channel MOSFET

New Product SUM45N25-58 Vishay Siliconix N-Channel 250-V (D-S) 175 °C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) 250 0.058 at VGS = 10 V 0.062 at VGS = 6 V ID (A) 45 43 TO-263 FEATURES • TrenchFET® Power MOSFETS • 175 °C Junction Temperature • New Low Thermal Resistance Package APPLICATIONS • Primary Side Switch • Plasma Display Panel Sustainer.

Features

• TrenchFET® Power MOSFETS
• 175 °C Junction Temperature
• New Low Thermal Resistance Package APPLICATIONS
• Primary Side Switch
• Plasma Display Panel Sustainer Function RoHS COMPLIANT D G DS Top View Ordering Information: SUM45N25-58-E3 (Lead (Pb)-free) G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Typical Avalanche Voltaged VDS (Avalanche)Typ Gate-Source Voltage VGS Continuous Drain Current (TJ = 175 °C) TC = 25 °C TC = 125 °C ID Pulsed Drain Current IDM Avalanche Current IAR Repetitive Avalan.