SUM40N15-38 - Vishay Siliconix

SUM40N15-38 N-Channel MOSFET

SUM40N15-38 Vishay Siliconix N-Channel 150-V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 150 0.038 at VGS = 10 V 0.042 at VGS = 6 V ID (A) 40 38 TO-263 FEATURES • TrenchFET® Power MOSFETs • 175 °C Junction Temperature • New Low Thermal Resistance Package • PWM Optimized • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Primary Side S.

Features

• TrenchFET® Power MOSFETs
• 175 °C Junction Temperature
• New Low Thermal Resistance Package
• PWM Optimized
• Compliant to RoHS Directive 2002/95/EC APPLICATIONS
• Primary Side Switch D G DS Top View Ordering Information: SUM40N15-38-E3 (Lead (Pb)-free) G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 175 °C) TC = 25 °C TC = 125 °C ID Pulsed Drain Current IDM Avalanche Current IAR Repetitive Avalanche Energya L = 0.1 mH EAR Maximum Power Dissipa.