STW75N60DM6 - STMicroelectronics

STW75N60DM6 N-Channel MOSFET

AM01476v1_tab These high-voltage N-channel Power MOSFETs are part of the MDmesh DM6 fastrecovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviors available in the market for the mo.

Features

3 2 1 TO-247 3 12 TO-247 long leads D(2, TAB) Order codes VDS RDS(on) max. STW75N60DM6 STWA75N60DM6 600 V 36 mΩ
• Fast-recovery body diode
• Lower RDS(on) per area vs previous generation
• Low gate charge, input capacitance and resistance
• 100% avalanche tested
• Extremely high dv/dt ruggedness
• Zener-protected ID 72 A G(1) Applications
• Switching applications S(3) Description AM01476v1_tab These high-voltage N-channel Power MOSFETs are part of the MDmesh DM6 fastrecovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery .