STW70N60M2 - STMicroelectronics

STW70N60M2 N-CHANNEL MOSFET

This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. S(3) AM01476v1 Order codes STW70N60M2 Table 1. Device summary .

Features

Order codes VDS @ TJmax RDS(on) max ID STW70N60M2 650 V 0.040 Ω 68 A 3 2 1 TO-247 Figure 1. Internal schematic diagram D(2) G(1)
• Extremely low gate charge
• Excellent output capacitance (Coss) profile
• 100% avalanche tested
• Zener-protected Applications
• Switching applications Description This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. S(3.