These devices are N-channel Power MOSFETs developed using MDmesh™ M2 EP enhanced performance technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics with very low turn-off switching losses, rendering them suitable for the most demanding very high frequency convert.
Order code
VDS @ TJmax RDS(on) max. ID
STB42N60M2-EP
STP42N60M2-EP
650 V
0.087 Ω 34 A
STW42N60M2-EP
• Extremely low gate charge
• Excellent output capacitance (COSS) profile
• Very low turn-off switching losses
• 100% avalanche tested
• Zener-protected
Figure 1: Internal schematic diagram
D(2, TAB)
Applications
• Switching applications
• Tailored for very high frequency converters
(f > 150 kHz)
G(1)
S(3)
Order code STB42N60M2-EP STP42N60M2-EP STW42N60M2-EP
Description
These devices are N-channel Power MOSFETs developed using MDmesh™ M2 EP enhanced performance technology. Thanks to .
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