STU40N10 Sa mHop Microelectronics C orp. STD40N10Green Product Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor PRODUCT SUMMARY VDSS ID RDS(ON) (mΩ) Max 100V 40A 20 @ VGS=10V FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. TO-252 and TO-251 Package. G S STU SERIES TO-252AA(D-PAK) G DS STD SERIES TO-.
Super high dense cell design for low RDS(ON). Rugged and reliable. TO-252 and TO-251 Package. G S STU SERIES TO-252AA(D-PAK) G DS STD SERIES TO-251(I-PAK) ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID Drain Current-Continuous c TC=25°C TC=70°C IDM -Pulsed a c EAS Single Pulse Avalanche Energy d PD Maximum Power Dissipation TC=25°C TC=70°C TJ, TSTG Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JC Thermal Resistance, Junction-to-Case R JA Thermal Resistance, Junction.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STU40N01 |
SamHop Microelectronics |
N-Channel Logic Level Enhancement Mode Field Effect Transistor | |
2 | STU40N2LH5 |
STMicroelectronics |
N-channel Power MOSFET | |
3 | STU402D |
SamHop Microelectronics |
Dual N-Channel E nhancement Mode Field Effect Transistor | |
4 | STU404D |
SamHop Microelectronics |
Dual N-Channel E nhancement Mode Field Effect Transistor | |
5 | STU405D |
SamHop Microelectronics |
Dual N-Channel E nhancement Mode Field Effect Transistor | |
6 | STU405DH |
SamHop Microelectronics |
MOSFET | |
7 | STU407D |
SamHop Microelectronics |
Dual Enhancement Mode Field Effect Transistor | |
8 | STU407DH |
SamHop Microelectronics |
Dual Enhancement Mode Field Effect Transistor | |
9 | STU408D |
SamHop Microelectronics |
Dual N-Channel MOSFET | |
10 | STU409DH |
SamHop Microelectronics |
Dual MOSFET | |
11 | STU410S |
SamHop Microelectronics |
N-Channel Logic Level Enhancement Mode Field Effect Transistor | |
12 | STU411D |
SamHop |
Dual Enhancement Mode Field Effect Transistor |