STU408D - SamHop Microelectronics

STU408D Dual N-Channel MOSFET

S amHop Microelectronics C orp. S T U408D J uly.25 2006 www.DataSheet4U.com Dual N-C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S 40V F E AT UR E S ( m W ) Max S uper high dense cell design for low R DS (ON ). ID 16A R DS (ON) R ugged and reliable. TO252-4L package. E S D P rotected. D1 D2 30 @ V G S = 10V 40 @ V G S.

Features

rameter OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS C IS S C OS S CRSS c www.DataSheet4U.com E LE CTR ICAL CHAR ACTE R IS TICS (T A =25 C unless otherwise noted) S ymbol Condition V GS = 0V, ID = 250uA V DS = 32V, V GS = 0V V GS = 20V, V DS = 0V V DS = V GS , ID = 250uA V GS = 10V, ID = 8A V GS = 4.5V, ID = 6A V DS = 5V, V GS = 4.5V V DS = 5V, ID =8A 10 15 735 120 70 V DD = 20V, ID = 3A, V GS = 10V, R GE N = 3 ohm 13 15 26 10 15 V DS =20V, ID = 8A, V GS =10V 7.2 2.0 3.8 2 Min Typ.