STU16NC50 - STMicroelectronics

STU16NC50 N-channel Power MOSFET

The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s UNINTERRUPTIBLE POWER SUPPLIES (UPS) s DC-AC CON.

Features

= 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature Value 500 500 ±30 16 10 64 160 1.28 3
  –65 to 150 150 (1)ISD ≤16A, di/dt ≤100A/µs, V DD ≤ V(BR)DSS, Tj ≤ T JMAX. Unit V V V A A A W W/°C V/ns °C °C (
•)Pulse width limited by safe operating area October 2001 1/8 STU16NC50 THERMAL DATA Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Maximum Lead Temperature For Soldering Purpose 0.78 62.5 300 °C/W °C/W °C AVALANCHE CHARACTERI.