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This device is an N-channel Power MOSFET developed using MDmesh M2 S(3) technology. Thanks to its strip layout and an improved vertical structure, the device AM01476v1_tab exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. Product status link STU16N65M2 Product s.
TAB
Order code
VDS
RDS(on) max.
ID
STU16N65M2
650 V
360 mΩ
11 A
3
2 1
• Extremely low gate charge
•
Excellent output capacitance (Coss) profile
IPAK
• 100% avalanche tested
• Zener-protected
D(2, TAB)
Applications
• Switching applications
G(1)
Description
This device is an N-channel Power MOSFET developed using MDmesh M2
S(3)
technology. Thanks to its strip layout and an improved vertical structure, the device
AM01476v1_tab exhibits low on-resistance and optimized switching characteristics, rendering it
suitable for the most demanding high efficiency converters.
Produ.
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