STU11NM60ND - STMicroelectronics

STU11NM60ND Power MOSFET

The device is an N-channel FDmesh™ II Power MOSFET that belongs to the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company's strip layout and associates all advantages of reduced onresistance and fast switching with an intrinsic fastrecovery body diode.It is therefore strongly recommend.

Features

Order codes VDSS (@Tjmax) RDS(on) max ID STD11NM60ND STF11NM60ND STI11NM60ND STP11NM60ND STU11NM60ND 650 V < 0.45 Ω 10 A 10 A(1) 10 A 10 A 10 A 1. Limited only by maximum temperature allowed
■ The worldwide best RDS(on)
* area amongst the fast recovery diode devices
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
■ Extremely high dv/dt and avalanche capabilities Application Switching applications Description The device is an N-channel FDmesh™ II Power MOSFET that belongs to the second generation of MDmesh™ technology. This revolutionary Powe.