Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charg.
tot dv/dt( 1 ) Tstg Tj Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 o C Drain Current (pulsed) Total Dissipation at T c = 25 C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature
o o
Value 600 600 ± 30 11 7 44 160 1.28 4 -65 to 150 150
( 1) ISD ≤11 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
Unit V V V A A A W W/ o C V/ns
o o
C C 1/5
(
•) Pulse width limited by safe operating area
January 1999
This.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STU11N65M2 |
STMicroelectronics |
N-channel Power MOSFET | |
2 | STU11N65M5 |
STMicroelectronics |
N-channel Power MOSFET | |
3 | STU11N65M5 |
INCHANGE |
N-Channel MOSFET | |
4 | STU11NC60 |
STMicroelectronics |
N-channel Power MOSFET | |
5 | STU11NM60ND |
STMicroelectronics |
Power MOSFET | |
6 | STU11NM60ND |
INCHANGE |
N-Channel MOSFET | |
7 | STU100N3LF3 |
ST Microelectronics |
N-channel Power MOSFET | |
8 | STU102S |
SamHop Microelectronics |
N-Channel MOSFET | |
9 | STU1030PL |
SamHop Microelectronics |
P-Channel Enhancement Mode MOSFET | |
10 | STU10L01 |
SamHop Microelectronics |
N-Channel Enhancement Mode Field Effect Transistor | |
11 | STU10N10 |
SamHop Microelectronics |
N-Channel MOSFET | |
12 | STU10N20 |
SamHop Microelectronics |
N-Channel MOSFET |