STU10NM65N - STMicroelectronics

STU10NM65N N-channel Power MOSFET

This series of devices implements the second generation of MDmesh™ Technology. This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. Table 1. Device summary Marking 10NM65N.

Features

www.DataSheet4U.com Type VDSS (@Tjmax) 710 V 710 V 710 V 710 V RDS(on) max < 0.48 Ω < 0.48 Ω < 0.48 Ω < 0.48 Ω ID 2 3 3 1 2 STD10NM65N STF10NM65N STP10NM65N STU10NM65N 9A 9 A(1) 9A 9A 1 TO-220 IPAK 1. Limited only by maximum temperature allowed
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■ 3 1 3 1 2 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Figure 1. TO-220FP DPAK Application
■ Internal schematic diagram Switching applications Description This series of devices implements the second generation of MDmesh™ Technology. This revolutionary Power MOSFET associates a new vertic.