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AM01475v1_noZen This device is an N-channel Power MOSFET developed using the second generation of MDmesh technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. Prod.
TAB
Order code
VDS
RDS(on) max.
ID
STU10NM60N
600 V
550 mΩ
10 A
3
2 1
• 100% avalanche tested
• Low input capacitance and gate charge
IPAK
• Low gate input resistance
D(2, TAB)
Applications
• Switching applications
G(1) S(3)
Description
AM01475v1_noZen
This device is an N-channel Power MOSFET developed using the second generation of MDmesh technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency c.
STU10NM60N - INCHANGE
Isc N-Channel MOSFET Transistor STU10NM60N ·FEATURES ·With TO-251(IPAK) package ·Low input capacitance and gate charge.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | STU10NM65N |
STMicroelectronics |
N-channel Power MOSFET |
|
| 2 | STU10NM65N |
INCHANGE |
N-Channel MOSFET |
|
| 3 | STU10N10 |
SamHop Microelectronics |
N-Channel MOSFET |
|
| 4 | STU10N20 |
SamHop Microelectronics |
N-Channel MOSFET |
|
| 5 | STU10N25 |
SamHop Microelectronics |
N-Channel MOSFET |
|
| 6 | STU10N60M2 |
STMicroelectronics |
N-CHANNEL POWER MOSFET |
|
| 7 | STU10NA50 |
ST Microelectronics |
N-Channel Enhancement Mode Fast Power MOS Transistor |
|
| 8 | STU10NB80 |
STMicroelectronics |
N-channel Power MOSFET |
|
| 9 | STU10NC70Z |
ST Microelectronics |
N-Channel MOSFET |
|
| 10 | STU10NC70ZI |
ST Microelectronics |
N-Channel MOSFET |
|
| 11 | STU100N3LF3 |
ST Microelectronics |
N-channel Power MOSFET |
|
| 12 | STU102S |
SamHop Microelectronics |
N-Channel MOSFET |
|