STS12NF30L - ST Microelectronics

STS12NF30L N-CHANNEL PowerMESH MOSFET

This Power MOSFET is the second generation of STMicroelectronics unique ” Single Feature Size™ ” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s DC MOTOR DRIVE s DC-D.

Features

ulsed) T otal Dissipation at Tc = 25 C o o Value 30 30 ± 20 12 7.5 48 2.5 Un it V V V A A A W I DM (
• ) P tot (
•) Pulse width limited by safe operating area May 1999 1/8 STS12NF30L THERMAL DATA R thj -amb Tj Ts tg (
*)Thermal Resistance Junction-ambient Maximum Operating Junction T emperature Storage Temperature 50 150 -55 to 150 o C/W o C o C (
*) Mounted on FR-4 board (t ≤ 10sec) ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbo l V (BR)DSS I DSS IGSS Parameter Drain-source Breakdown Voltage Test Con ditions I D = 250 µ A V GS = 0 Min. 30 1 10 ± 100 T.