STP9437 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, notebook computer power management, and other battery powered cir.
ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Symbol Drain-Source Voltage VDSS Gate-Source Voltage Continuous Drain Current (TJ=150℃) TA=25℃ TA=70℃ Pulsed Drain Current VGSS ID IDM Continuous Source Current (Diode Conduction) Power Dissipation TA=25℃ TA=70℃ Operation Junction Temperature IS PD TJ Storgae Temperature Range TSTG Thermal Resistance-Junction to Ambient RθJA Typical -30 ±12 -6.8 -4.6 -30 -2.3 2.8 1.8 -55/150 -55/150 70 Unit V V A A A W ℃ ℃ ℃/W STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyri.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STP9434 |
STANSON |
P Channel Enhancement Mode MOSFET | |
2 | STP9435 |
Semtron |
P-Channel Enhancement Mode MOSFET | |
3 | STP9435 |
STANSON |
P Channel Enhancement Mode MOSFET | |
4 | STP90N4F3 |
STMicroelectronics |
N-channel Power MOSFET | |
5 | STP90N55F4 |
STMicroelectronics |
N-channel Power MOSFET | |
6 | STP90N6F6 |
STMicroelectronics |
N-CHANNEL POWER MOSFET | |
7 | STP90NF03L |
STMicroelectronics |
N-CHANNEL POWER MOSFET | |
8 | STP90NF03L |
INCHANGE |
N-Channel MOSFET | |
9 | STP90NF03L-1 |
STMicroelectronics |
N-CHANNEL POWER MOSFET | |
10 | STP9235 |
STANSON |
P-Channel Enhancement Mode MOSFET | |
11 | STP9527 |
STANSON |
P-Channel Enhancement Mode MOSFET | |
12 | STP9547 |
STANSON |
P-Channel Enhancement Mode MOSFET |