STP90N55F4 - STMicroelectronics

STP90N55F4 N-channel Power MOSFET

This device is an N-channel Power MOSFET developed using ST’s STripFET™ DeepGATE™ technology. The device has a new gate structure and is specially designed to minimize on-state resistance to provide superior switching performance. TAB 3 2 1 TO-220 Figure 1. Internal schematic diagram $4!" ' Table 1. Device summary Order codes STP90N55F4 Marking 90.

Features

Type STP90N55F4 VDSS 55 V RDS(on) max < 0.008 Ω ID 90 A
■ Exceptional dv/dt capability
■ Extremely low on-resistance RDS(on)
■ 100% avalanche tested Applications
■ Switching applications Description This device is an N-channel Power MOSFET developed using ST’s STripFET™ DeepGATE™ technology. The device has a new gate structure and is specially designed to minimize on-state resistance to provide superior switching performance. TAB 3 2 1 TO-220 Figure 1. Internal schematic diagram $4!" ' Table 1. Device summary Order codes STP90N55F4 Marking 90N55F4 3 !-V Packages T.