STP4NK80Z - STMicroelectronics

STP4NK80Z N-channel Power MOSFET

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutiona.

Features

Type STP4NK80Z STP4NK80ZFP STD4NK80Z STD4NK80Z-1 VDSS (@Tjmax) 800 V 800 V 800 V 800 V RDS(on) < 3.5 Ω < 3.5 Ω < 3.5 Ω < 3.5 Ω ID 3A 3A 3A 3A
■ Extremely high dv/dt capability
■ 100% avalanche tested
■ Gate charge minimized
■ Very low intrinsic capacitances
■ Very good manufacturing repeatibility Description The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such se.