STP4NB50FP - ST Microelectronics

STP4NB50FP N-CHANNEL MOSFET

Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprieraty edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charg.

Features

bol VDS VDGR VGS ID ID IDM ( ) PTOT dv/dt VISO Tstg Tj Parameter STP4NB50 Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature
  –65 to 150 150 (1)ISD ≤4 A, di/dt ≤200A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX Value STP4NB50FP 500 500 ±30 3.8 2.4 15.2 80 0.64 4.5 2500 2.5 1.6 15.2 35 0.28 Unit V V V A .