This Power MOSFET is among the latest developments that use an advanced technology (STripFET™ DeepGATE™ technology), which has been especially tailored to minimize on-state resistance, provide superior switching performance and withstand high energy pulse in avalanche and commutation mode. The resulting transistor shows extremely high packing density for low.
Type STB140N10F4 STF140N10F4 STP140N10F4
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VDSS 100 V 100 V 100 V
RDS(on) max < 6.5 mΩ < 6.5 mΩ < 6.5 mΩ
ID 140 A 55 A
3
3 1 2
140 A TO-220FP
1
2
TO-220
Exceptional dv/dt capability Extremely low on-resistance RDS(on) 100% avalanche tested
3 1
Application
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D²PAK
Switching applications
Figure 1.
Internal schematic diagram
Description
This Power MOSFET is among the latest developments that use an advanced technology (STripFET™ DeepGATE™ technology), which has been especially tailored to minimize on-state resistance, provide superior switching performance and withstand high en.
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