STN8822A - Stanson Technology

STN8822A MOSFET

STN8822A is the dual N-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, such as notebook computer power management and other battery powe.

Features

e noted ) Parameter Symbol Typical Drain-Source Voltage Gate-Source Voltage VDSS VGSS 20 +/-10 Unit V V Continuous Drain Current (TJ=150℃) TA=25℃ TA=70℃ Pulsed Drain Current Continuous Source Current (Diode Conduction) Power Dissipation TA=25℃ TA=70℃ Operation Junction Temperature Storage Temperature Range Thermal Resistance-Junction to Ambient ID IDM IS PD TJ TSTG RθJA 6.0 3.4 15 1.5 2.0 1.2 -40/140 -55/150 105 A A A W ℃ ℃ ℃/W STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://www.stansontech.com STN8822A 2009. V1 STN8822A Dual N Channel Enhancemen.