STN4488L - Stanson Technology

STN4488L MOSFET

STN4488L is the N-Channel logic enhancement mode power field effect transistors which are produced using high cell density DMOS trench technology. It is suitable for the power management applications in the portable or battery powered system. PIN CONFIGURATION SOP-8 FEATURE 30V/20A, RDS(ON) = 3.8mΩ (Typ.) @VGS = 10V 30V/18A, RDS(ON) = 5.2mΩ @VGS = 4.5V Sup.

Features

50℃) TA=25℃ TA=70℃ Pulsed Drain Current Continuous Source Current (Diode Conduction) Power Dissipation TA=25℃ TA=70℃ Operation Junction Temperature Storgae Temperature Range Thermal Resistance-Junction to Ambient VGSS ID IDM IS PD TJ TSTG RθJA ±20 20 15 17 12 80 3.0 3.1 1.7 20 1.1 -55/150 -55/150 Typ 59 Max 75 V A A A W ℃ ℃ ℃/W STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STN4488L 2009. V1 STN4488L N Channel Enhancement Mode MOSFET 20.0A ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted ) Par.