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STN4488L |
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| Part Number | STN4488L |
| Manufacturer | Stanson Technology |
| Description | STN4488L is the N-Channel logic enhancement mode power field effect transistors which are produced using high cell density DMOS trench technology. It is suitable for the power management applications ... |
| Features |
50℃)
TA=25℃ TA=70℃
Pulsed Drain Current Continuous Source Current (Diode Conduction)
Power Dissipation
TA=25℃ TA=70℃
Operation Junction Temperature
Storgae Temperature Range
Thermal Resistance-Junction to Ambient
VGSS
ID
IDM IS PD TJ TSTG RθJA
±20
20 15 17 12
80 3.0 3.1 1.7 20 1.1 -55/150
-55/150
Typ 59
Max 75
V
A
A A W ℃ ℃ ℃/W
STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com
Copyright © 2007, Stanson Corp.
STN4488L 2009. V1
STN4488L
N Channel Enhancement Mode MOSFET
20.0A
ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted )
Par... |
| Document |
 STN4488L Data Sheet
PDF 633.13KB |
| Distributor | Stock | Price | Buy |
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