STLD257N4F7AG - STMicroelectronics

STLD257N4F7AG Automotive-grade N-channel Power MOSFET

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Product status link STLD257N4F7AG Product summary Order code STLD257N4F7AG Marking 257 Package PowerFLAT™ 5x.

Features

Order code STLD257N4F7AG VDS 40 V RDS(on) max. 1.1 mΩ ID 120 A D(5, 6, 7, 8)
• AEC-Q101 qualified
• Among the lowest RDS(on) on the market
• Excellent FoM (figure of merit)
• Low Crss/Ciss ratio for EMI immunity
• High avalanche ruggedness
• Wettable flank package G(4) Applications
• Switching applications S(1, 2, 3) AM15540v4 Description This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Pro.