STLD200N4F6AG - STMicroelectronics

STLD200N4F6AG N-channel Power MOSFET

This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. S(1, 2, 3) Order code STLD200N4F6AG Marking 200 Table 1: Device summary Package PowerFLAT™ 5x6 dual side cooling Packaging Tape and reel July 2017 DocID028892 Rev 5.

Features

Order code STLD200N4F6AG VDS 40 V RDS(on) max. 1.50 mΩ ID 120 A
 AEC-Q101 qualified
 Very low on-resistance
 Very low gate charge
 High avalanche ruggedness
 Low gate drive power loss
 Wettable flank package Applications
 Switching applications Description This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. S(1, 2, 3) Order code STLD200N4F6AG Marking 200 Table 1: Device summary Package PowerFLAT™ 5x6 dual side cooling Packaging Tape and reel .