STL51007X - Siemens Semiconductor

STL51007X 1300 nm Laser in Receptacle Package

www.DataSheet4U.com 1300 nm Laser in Receptacle Package, Low Power STL 51007X • • • • Designed for application in fiber-optic networks Laser diode with Multi-Quantum Well structure Suitable for bit rates up to 1 Gbit/s Ternary photodiode at rear mirror for monitoring and control of radiant power • Hermetically sealed subcomponents, similar to TO 18 • SM .

Features

Group 1 02.95 STL 51007X Characteristics All optical data refer to a coupled 10/125 µm SM fiber, TC = 25 °C. Parameter Laser Diode Optical output power Emission wavelength center of range Φe = 0.2 mW Spectral bandwidth Φe = 0.2 mW (RMS) Threshold current (− 40 … + 85 °C) Forward voltage Φe = 0.2 mW Radiant power at threshold Slope efficiency Differential series resistance Rise time/fall time Monitor Diode Dark current, VR = 5 V, Φe = 0 Photocurrent, Φe = 0.2 mW Φe λ ∆λ > 0.4 1280 … 1330 <5 2 … 45 < 1.5 < 10 8 … 60 <8 <1 mW nm nm mA V µW mW/A Ω ns Symbol Values Unit Ith VF Φeth η rS tR, .