STL50N6F7 - STMicroelectronics

STL50N6F7 N-CHANNEL POWER MOSFET

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Order code STL50N6F7 Marking 50N6F7 Table 1: Device summary Package PowerFLATTM 5x6 Packaging Tape and reel Nove.

Features

Order code STL50N6F7 VDS 60 V RDS(on) max. 11 mΩ ID 60 A
 Among the lowest RDS(on) on the market
 Excellent figure of merit (FoM)
 Low Crss/Ciss ratio for EMI immunity
 High avalanche ruggedness Applications
 Switching applications Description This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Order code STL50N6F7 Marking 50N6F7 Table 1: Device summary Package PowerFLATTM 5x6 Packaging Tape a.