Semiconductor STK830P Advanced Power MOSFET SWITCHING REGULATOR APPLICATIONS Features • • • • High Voltage: BVDSS=500V(Min.) Low Crss : Crss=8.4pF(Typ.) Low gate charge : Qg=17nC(Typ.) Low RDS(on) :RDS(on)=1.5Ω(Max.) Ordering Information Type NO. STK830P Marking STK830 Package Code TO-220AB-3L Outline Dimensions Φ3.90 Max. 9.80~10.20 1.17~1.37 unit : mm.
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• High Voltage: BVDSS=500V(Min.) Low Crss : Crss=8.4pF(Typ.) Low gate charge : Qg=17nC(Typ.) Low RDS(on) :RDS(on)=1.5Ω(Max.)
Ordering Information
Type NO. STK830P Marking STK830 Package Code TO-220AB-3L
Outline Dimensions
Φ3.90 Max. 9.80~10.20 1.17~1.37
unit : mm
14.90~15.30
12.16~12.36
28.50~29.10
13.50~13.90
3.14 Typ.
1.17 Min. 0.88 Max.
8.50~8.90
2.54 Typ. 1 2 3
2.54 Typ.
0.43 Max.
4.50~4.70
KSD-T0P009-001
2.87 Max.
PIN Connections 1. Gate 2. Drain 3. Source
1
STK830P
Absolute maximum ratings
Characteristic
Drain-source voltage Gate-source voltage Drain current (DC).
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STK830F |
AUK |
Advanced Power MOSFET | |
2 | STK830FC |
AUK |
Advanced Power MOSFET | |
3 | STK8312 |
Sensortek |
Digital Output 3-axis MEMS Accelerometer | |
4 | STK8313 |
Sensortek |
Digital Output 3-axis MEMS Accelerometer | |
5 | STK800 |
ST Microelectronics |
N-channel Power MOSFET | |
6 | STK801 |
SamHop Microelectronics |
N-Channel MOSFET | |
7 | STK8050 |
ETC |
Block Diagram | |
8 | STK8250 |
Sanyo |
50W MIN AF POWER AMP | |
9 | STK8250 |
ETC |
(STKxxxx) Output Stage of AF Power Amp | |
10 | STK8260 |
ETC |
(STKxxxx) Output Stage of AF Power Amp | |
11 | STK8260II |
Sanyo |
60W min AF Power Amp / Output Stage | |
12 | STK8270 |
ETC |
(STKxxxx) Output Stage of AF Power Amp |