Semiconductor STK830FC Advanced Power MOSFET Features • Avalanche rugged technology. • • • • Low input capacitance. Improved gate charge. Low leakage current : 10uA (Max.) @ VDS=500V. Low RDS(ON) : 1.17Ω(Typ.) Ordering Information Type NO. STK830FC Marking STK830 Package Code TO-220F-3SL Outline Dimensions unit : mm PIN Connections 1. Gate 2. Drain 3..
• Avalanche rugged technology.
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•
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• Low input capacitance. Improved gate charge. Low leakage current : 10uA (Max.) @ VDS=500V. Low RDS(ON) : 1.17Ω(Typ.)
Ordering Information
Type NO. STK830FC Marking STK830 Package Code TO-220F-3SL
Outline Dimensions
unit :
mm
PIN Connections 1. Gate 2. Drain 3. Source
KST-H017-000
1
STK830FC
Absolute maximum ratings
Characteristic
Drain-Source voltage Gate-Source voltage Continuous Drain current (Tc=25℃) Continuous Drain current (Tc=100℃) Drain Current-Pulsed Power Dissipation (Tc=25℃) Linear Derating Factor Single Pulsed Avalanche Energy Avalanche.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STK830F |
AUK |
Advanced Power MOSFET | |
2 | STK830P |
AUK |
Advanced Power MOSFET | |
3 | STK8312 |
Sensortek |
Digital Output 3-axis MEMS Accelerometer | |
4 | STK8313 |
Sensortek |
Digital Output 3-axis MEMS Accelerometer | |
5 | STK800 |
ST Microelectronics |
N-channel Power MOSFET | |
6 | STK801 |
SamHop Microelectronics |
N-Channel MOSFET | |
7 | STK8050 |
ETC |
Block Diagram | |
8 | STK8250 |
Sanyo |
50W MIN AF POWER AMP | |
9 | STK8250 |
ETC |
(STKxxxx) Output Stage of AF Power Amp | |
10 | STK8260 |
ETC |
(STKxxxx) Output Stage of AF Power Amp | |
11 | STK8260II |
Sanyo |
60W min AF Power Amp / Output Stage | |
12 | STK8270 |
ETC |
(STKxxxx) Output Stage of AF Power Amp |