STI70N10F4 - ST Microelectronics

STI70N10F4 Power MOSFETs

This STripFET™ DeepGATE™ Power MOSFET technology is among the latest improvements, which have been especially tailored to minimize on-state resistance, with a new gate structure, providing superior switching performance. Figure 1. Internal schematic diagram $ ' 3 !-V Table 1. Device summary Marking 70N10F4 Package I²PAK Packaging Tube .

Features

Type STI70N10F4
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■ VDSS 100 V RDS(on) max < 0.0165 Ω ID 65 A Exceptional dv/dt capability Extremely low on-resistance RDS(on) 100% avalanche tested I²PAK 3 12 Application
■ Switching applications Description This STripFET™ DeepGATE™ Power MOSFET technology is among the latest improvements, which have been especially tailored to minimize on-state resistance, with a new gate structure, providing superior switching performance. Figure 1. Internal schematic diagram $ ' 3 !-V Table 1. Device summary Marking 70N10F4 Package I²PAK Packaging Tube Order codes STI70N10F.