STG8210 - SamHop Microelectronics

STG8210 Dual N-Channel Enhancement Mode Field Effect Transistor

www.DataSheet4U.com S T G 8210 S amHop Microelectronics C orp. J un,08 2005 ver1.1 Dual N-C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S 20V F E AT UR E S ( mW ) Max ID 7A R DS (ON) S uper high dense cell design for low R DS (ON ). 20 @ V G S = 4.0V 28 @ V G S = 2.5V R ugged and reliable. S urface Mount P ackage. E S .

Features

HAR ACTE R IS TICS (T A = 25 C unless otherwise noted) Parameter OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage BV DS S IDS S IGS S V GS (th) R DS (ON) gFS C IS S C OS S CRSS c S ymbol Condition V GS = 0V, ID = 250uA V DS = 16V, V GS = 0V V GS = 10V,V DS = 0V V DS = V GS , ID = 250uA V GS = 4.0V, ID = 5A V GS =2.5V, ID = 3A V DS = 5V, ID =5A Min Typ C Max Unit 20 1 10 0.5 0.7 16.5 23 12 999 234 144 1.5 20 28 V uA uA V m ohm m ohm ON CHAR ACTE R IS TICS b Gate Threshold Voltage Drain-S ource On-S tate R esistance Forward Transconduc.