STG8205 - SamHop Microelectronics

STG8205 Dual N-Channel Enhancement Mode Field Effect Transistor

Green Product STG8205 Ver 1.0 S a mHop Microelectronics C orp. Dual N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS 20V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ID 6A R DS(ON) (m Ω) Max 26 @ VGS=4.5V 35 @ VGS=2.5V T S S OP D 1/D 2 S1 S1 G1 1 2 3 4 8 7 6 5 D 1/D 2 S2 S2 .

Features

Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ID 6A R DS(ON) (m Ω) Max 26 @ VGS=4.5V 35 @ VGS=2.5V T S S OP D 1/D 2 S1 S1 G1 1 2 3 4 8 7 6 5 D 1/D 2 S2 S2 G2 D1 D2 G1 G2 (T OP V IE W) S1 S2 ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b a Limit 20 ±10 TA=25°C TA=70°C TA=25°C TA=70°C 6 4.8 24 a Units V V A A A W W °C Maximum Power Dissipation 1.5 1 -55 to 150 Operating Junction and Storage Temperature R.